Search for: [Abstrakt = "Strong influence on impurity\-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs\/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si3N4 and SiO2 as encapsulation dielectric layers. The largest intermixing occurs in the n\-InP capped samples and is explained by the enhancement in out\-diffusion of positive ions by the built\-in electric field."]

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