@misc{Wang_Biao_Ta-doped_2010, author={Wang, Biao and Hu, LiMing and Liu, FengMin and Qin, Li and Liu, Yun and Wang, Lijun}, contributor={Gaj, Miron. Redakcja and Urbańczyk, Wacław. Redakcja}, year={2010}, rights={Wszystkie prawa zastrzeżone (Copyright)}, publisher={Oficyna Wydawnicza Politechniki Wrocławskiej}, description={Optica Applicata, Vol. 40, 2010, nr 1, s. 25-31}, language={eng}, abstract={Ta-doped In2O3 transparent conductive oxide (TCO) thin films are deposited on glass substrates by radio-frequency (RF) sputtering at room-temperature. The influence of sputtering power on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 2.8×10–4 Ωcm is obtained from the film deposited at the sputtering power of 170 W. The average optical transmittance of the films is over 90%.}, title={Ta-doped In2O3 transparent conductive films with high transmittance and low resistance}, type={artykuł}, keywords={optyka, sputtering, In2O3, transparent conductive oxide, thin films}, }