@misc{Papis_Ewa_(100)_2009, author={Papis, Ewa and Barańska, Anna and Karbownik, Piotr and Szerling, Anna and Wójcik-Jedlińska, Anna and Bugajski, Maciej and Rzodkiewicz, Witold and Szade, Jacek and Wawro, Andrzej}, contributor={Gaj, Miron. Redakcja and Urbańczyk, Wacław. Redakcja}, year={2009}, rights={Wszystkie prawa zastrzeżone (Copyright)}, publisher={Oficyna Wydawnicza Politechniki Wrocławskiej}, description={Optica Applicata, Vol. 39, 2009, nr 4, s. 787-797}, language={eng}, abstract={The effects of HCl-based chemical and Ar+ sputter etching treatment on (100) GaAs surface properties with the aim to develop the procedure of surface preparation before metal deposition have been investigated. Variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy, atomic force microscopy and photoluminescence have been used to study the surface characterization. We show that combining chemical etching in 5% HCl with Ar+ sputter etching gives the best results for surface cleaning prior to metal deposition. The application of this two-step treatment allows to obtain Ni/AuGe/Ni/Au ohmic contact with rc = 2×10–6 Ωcm2 with excellent adhesion and long-term thermal stability.}, title={(100) GaAs surface treatment prior to contact metal deposition in AlGaAs/GaAs quantum cascade laser processing}, type={artykuł}, keywords={optyka, GaAs, surface treatment, sputter etching}, }