@misc{Pucicki_Damian_Technology_2007,
 author={Pucicki, Damian and Zborowska-Lindert, Iwona and Ściana, Beata and Radziewicz, Damian and Boratyński, Bogusław},
 contributor={Gaj, Miron. Redakcja},
 year={2007},
 rights={Wszystkie prawa zastrzeżone (Copyright)},
 publisher={Oficyna Wydawnicza Politechniki Wrocławskiej},
 description={Optica Applicata, Vol. 37, 2007, nr 4, s. 415-421},
 language={eng},
 abstract={Double quantum well (DQW) (In, Ga)(As, N)/GaAs p-i-n photodetectors, grown by solid source molecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption for wavelengths above 870 nm have been investigated. The active region of the photodetectors contained two very thin absorption layers: 10.5 nm Ga(As, N) (structure #DP02) or 4 nm (In, Ga)(As, N) (#DP03). In spite of this, photodetectors exhibited high sensitivity (0.0525 A/W for 980 nm) for wavelength greater than the absorption edge of GaAs (870 nm). The dark current of photodetectors did not exceed 0.1 μA.},
 title={Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region},
 type={artykuł},
 keywords={optyka, p-i-n photodetector, diluted nitrides, (In,Ga)(As,N), GaAs-based photodetectors, double quantum well (DQW) heterostructures},
}