@misc{Kazlauskas_Karolis_Photoluminescence_2006,
 author={Kazlauskas, Karolis and Jursenas, Saulius and Miasojedovas, Saulius and Pobedinskas, Paulius and Tamulaitis, Gintautas and Zukauskas, Arturas and Ivanov, Vitalii Yu. and Godlewski, Marek and Skierbiszewski, Czesław and Siekacz, Marcin and Leszczyński, Michał and Franssen, Gijs and Perlin, Piotr and Suski, Tadeusz and Grzegory, Izabella},
 contributor={Gaj, Miron. Redakcja and Wilk, Ireneusz. Redakcja},
 year={2006},
 rights={Wszystkie prawa zastrzeżone (Copyright)},
 publisher={Oficyna Wydawnicza Politechniki Wrocławskiej},
 description={Optica Applicata, Vol. 36, 2006, nr 2-3, s. 181-185},
 language={eng},
 abstract={Photoluminescence spectroscopy in combination with Monte Carlo simulation of exciton hopping is demonstrated to be a valuable tool for quantitative analysis of the band potential profile in active layers for InGaN-based light emitters. Recently proposed double-scaled potential profile model is used to reveal the scale of potential fluctuations in the individual In-rich regions as well as the dispersion of the average exciton localization energy in these regions. The influence of the different potential fluctuation scales on the stimulated emission threshold and luminescence decay time of highly excited InGaN active layers is studied.},
 title={Photoluminescence spectroscopy for the evaluation of band potential roughness of InGaN active layers},
 type={artykuł},
 keywords={optyka, photoluminescence, InGaN quantum wells, Monte Carlo simulation, exciton hopping},
}