@misc{Miczek_Marcin_Influence_2005,
 author={Miczek, Marcin and Adamowicz, Bogusława and Hashizume, Tamotsu and Hasegawa, Hideki},
 contributor={Gaj, Miron. Redakcja and Wilk, Ireneusz. Redakcja},
 year={2005},
 rights={Wszystkie prawa zastrzeżone (Copyright)},
 publisher={Oficyna Wydawnicza Politechniki Wrocławskiej},
 description={Optica Applicata, Vol. 35, 2005, nr 3, s. 355-361},
 language={eng},
 abstract={The influence of surface state density NSS and bulk non-radiative lifetime t on room temperature photoluminescence quantum efficiency YPL and surface photovoltage (SPV) versus the excitation light intensity F was studied theoretically for GaAs and wurtzite GaN using self-consistent computer simulations. It was demonstrated that SPV(F ) dependences are more sensitive than YPL(F ) to a change in magnitude of NSS, especially for high NSS and at low F, whereas SPV is practically insensitive to t contrary to YPL. The simultaneous measurement of YPL and SPV versus F, combined with rigorous computer analysis, seems to be a very promising method for contactless characterization of the surface and bulk trap parameters.},
 title={Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces},
 type={artykuł},
 keywords={optyka, gallium arsenide, gallium nitride, surface states, bulk traps, photoluminescence, surface photovoltage},
}