TY - GEN N1 - Optica Applicata, Vol. 40, 2010, nr 1, s. 25-31 N2 - Ta-doped In2O3 transparent conductive oxide (TCO) thin films are deposited on glass substrates by radio-frequency (RF) sputtering at room-temperature. The influence of sputtering power on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 2.8×10–4 Ωcm is obtained from the film deposited at the sputtering power of 170 W. The average optical transmittance of the films is over 90%. L1 - http://dbc.wroc.pl/Content/58224/optappl_4001p25.pdf M3 - artykuł L2 - http://dbc.wroc.pl/Content/58224 PY - 2010 KW - optyka KW - sputtering KW - In2O3 KW - transparent conductive oxide KW - thin films C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Wang, Biao A1 - Hu, LiMing A1 - Liu, FengMin A1 - Qin, Li A1 - Liu, Yun A1 - Wang, Lijun A2 - Gaj, Miron. Redakcja A2 - Urbańczyk, Wacław. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - Ta-doped In2O3 transparent conductive films with high transmittance and low resistance UR - http://dbc.wroc.pl/dlibra/publication/edition/58224 ER -