TY - GEN N1 - Optica Applicata, Vol. 39, 2009, nr 4, s. 787-797 N2 - The effects of HCl-based chemical and Ar+ sputter etching treatment on (100) GaAs surface properties with the aim to develop the procedure of surface preparation before metal deposition have been investigated. Variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy, atomic force microscopy and photoluminescence have been used to study the surface characterization. We show that combining chemical etching in 5% HCl with Ar+ sputter etching gives the best results for surface cleaning prior to metal deposition. The application of this two-step treatment allows to obtain Ni/AuGe/Ni/Au ohmic contact with rc = 2×10–6 Ωcm2 with excellent adhesion and long-term thermal stability. L1 - http://dbc.wroc.pl/Content/62577/optappl_3904p787.pdf M3 - artykuł L2 - http://dbc.wroc.pl/Content/62577 PY - 2009 KW - optyka KW - GaAs KW - surface treatment KW - sputter etching C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Papis, Ewa A1 - Barańska, Anna A1 - Karbownik, Piotr A1 - Szerling, Anna A1 - Wójcik-Jedlińska, Anna A1 - Bugajski, Maciej A1 - Rzodkiewicz, Witold A1 - Szade, Jacek A1 - Wawro, Andrzej A2 - Gaj, Miron. Redakcja A2 - Urbańczyk, Wacław. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - (100) GaAs surface treatment prior to contact metal deposition in AlGaAs/GaAs quantum cascade laser processing UR - http://dbc.wroc.pl/dlibra/publication/edition/62577 ER -