TY - GEN N1 - Optica Applicata, Vol. 36, 2006, nr 2-3, s. 297-309 N2 - The segregation effect occuring during molecular beam epitaxy and metalorganic vapour phase epitaxy growth of ternary III-V semiconductor heterostructures was investigated by quantitative transmission electron microscopy (QTEM) and by simulation of optical properties. The concentration distribution of various III-V semiconductor heterostructures was measured by QTEM and averaged along the direction perpendicular to the growth direction. Resulting concentration profiles could be well fitted using the model of Muraki et al. (Muraki K., Fukatsu S., Shiraki Y., Ito R., Appl. Phys. Lett. 61(5), 1992, p. 557) yielding the segregation efficieny R. For the investigation of the effect of segregation on the photoluminescence, concentration profiles for different segregation efficiencies were simulated and photoluminescence peak energies were derived by solving Schrödinger’s equation for spatially varying potentials deduced from the measured concentration profiles. L1 - http://dbc.wroc.pl/Content/63590/optappl_3623p297.pdf M3 - artykuł L2 - http://dbc.wroc.pl/Content/63590 PY - 2006 KW - optyka KW - quantitative TEM KW - surface segregation C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Schowalter, Marco A1 - Rosenauer, Andreas A1 - Litvinov, Dimitri A1 - Gerthsen, Dagmar A2 - Gaj, Miron. Redakcja A2 - Wilk, Ireneusz. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - Investigation of segregation by quantitative transmission electron microscopy UR - http://dbc.wroc.pl/dlibra/publication/edition/63590 ER -