TY - GEN
A1 - Motyka, Marcin
A1 - Sęk, Grzegorz
A1 - Andrzejewski, Janusz
A1 - Kudrawiec, Robert
A1 - Misiewicz, Jan
A1 - Ściana, Beata
A1 - Radziewicz, Damian
A1 - Tłaczała, Marek
A2 - Gaj, Miron. Redakcja
A2 - Wilk, Ireneusz. Redakcja
PB - Oficyna Wydawnicza Politechniki Wrocławskiej
N2 - In0.22Ga0.78As/GaAs single quantum wells with different distance from a delta doped layer have been investigated by using contactless electroreflectance (CER) spectroscopy. The oscillator strength of optical transitions and the value of the built-in electric field have been determined from CER spectra. Obtained results have been compared with theoretical calculations preformed in the framework of the effective mass approximation. In order to accurately find the wavefunctions of electrons and holes confined in the quantum well embedded in the built-in electric field, the time-dependent Schrödinger equation has been solved.
L1 - http://dbc.wroc.pl/Content/72835/optappl_3503p471.pdf
CY - Wrocław
L2 - http://dbc.wroc.pl/Content/72835
KW - optyka
KW - quantum well
KW - contactless electroreflectance
KW - built-in electric field
KW - delta-doping
T1 - Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer
UR - http://dbc.wroc.pl/dlibra/publication/edition/72835
ER -