TY - GEN N1 - Optica Applicata, Vol. 35, 2005, nr 3, s. 537-548 N2 - A class of macroscopic, so-called oval defects, which may be found in an epitaxial A3B5 materials grown by molecular beam epitaxy (MBE) technique, is studied in this paper. The investigations were performed on the structures containing (Al)GaAs or InGaAs layers. The geometry, morphology as well as the optical properties of defects were studied by different experimental methods, like spatially resolved photoluminescence (SRPL), scanning electron microscopy (SEM) and cathodoluminescence (CL). The conclusions are drawn as to the sources of defects and conditions of their appearance. L1 - http://dbc.wroc.pl/Content/72847/optappl_3503p537.pdf M3 - artykuł L2 - http://dbc.wroc.pl/Content/72847 PY - 2005 KW - optyka KW - oval defects KW - A3B5 KW - molecular beam epitaxy (MBE) KW - spectrally resolved photoluminescence KW - scanning electron microscopy (SEM) KW - cathodoluminescence C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Szerling, Anna A1 - Kosiel, Kamil A1 - Wójcik-Jedlińska, Anna A1 - Płuska, Mariusz A1 - Bugajski, Maciej A2 - Gaj, Miron. Redakcja A2 - Wilk, Ireneusz. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy UR - http://dbc.wroc.pl/dlibra/publication/edition/72847 ER -