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Title:

Low resistance ohmic contacts to n-GaAs for application in GaAs/AlGaAs quantum cascade lasers

Group publication title:

Optica Applicata

Creator:

Karbownik, Piotr ; Barańska, Anna ; Szerling, Anna ; Macherzyński, Wojciech ; Papis, Ewa ; Kosiel, Kamil ; Bugajski, Maciej ; Tłaczała, Marek ; Jakieła, Rafał

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Subject and Keywords:

optyka ; ohmic contacts ; sputtering ; rapid thermal annealing (RTA) ; quantum cascade lasers (QCLs)

Description:

Optica Applicata, Vol. 39, 2009, nr 4, s. 655-661

Abstrakt:

This paper reports on the results of optimization of ohmic contacts for GaAs/AlGaAs quantum cascade lasers (QCLs). Technological parameters during optimization concerned surface preparation, evaporation method, and thermal treatment. The aim of this research was to obtain low resistance and time stable ohmic contacts. The average specific contact resistance was 6×10–7 Ωcm–2 with record value below 3×10–7 Ωcm–2. It appears that the crucial role in contact formation is played by the in-situ surface pretreatment and thermal processing. Circular transmission line method (CTLM) was applied for electrical characterization of Ni/AuGe/Ni/Au metallization system. Secondary ion mass spectroscopy (SIMS) was used for determination of Au diffusion into semiconductor. The system presented was used in fabrication of pulse operating QCLs. The lasers mounted with diamond heat spreaders on copper block cooled by liquid nitrogen (LN) achieved optical powers over 1 W, threshold current density values of 7 kAcm–2 and differential efficiencies above 1 W/A.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2009

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 39, 2009 ; Optica Applicata, Vol. 39, 2009, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska