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Title:

New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors

Group publication title:

Optica Applicata

Creator:

Wośko, Mateusz ; Paszkiewicz, Bogdan ; Radziewicz, Damian ; Ściana, Beata ; Paszkiewicz, Regina ; Tłaczała, Marek ; Kovac, Jaroslav ; Vincze, Andrej

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Subject and Keywords:

optyka ; growth models ; metalorganic vapor phase epitaxy (MOVPE) ; gallium compounds ; semiconducting III-V materials

Description:

Optica Applicata, Vol. 39, 2009, nr 4, s. 739-747

Abstrakt:

In this paper, the authors present a new attempt to the growth of AlGaAs structures with continuous change of aluminum content by metalorganic vapor phase epitaxy (MOVPE) technique. The new method of design of multistage growth process for functionally graded semiconductor materials (FGM) has been proposed. A comparison between classical single stage and multistage growth process has been carried out. The analysis of PVS, ECV and SIMS results of fabricated photodetector structures shows significant differences in composition profile of theoretically estimated and fabricated structures, and prove that the new conception of multistage process has more advantages over classical single stage procedure.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2009

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 39, 2009 ; Optica Applicata, Vol. 39, 2009, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska