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Chromium layers were vapor deposited under ultrahigh vacuum onto samples cut out of a single crystal of 6H-SiC(0001) that were Ar+ bombardment modified. The substrates and electrical contacts formed by the Cr adlayer were characterized in situ by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr/SiC contacts reveal a good I–V characteristic linearity without the use of heavy impurity doping and high-temperature annealing.