Object structure
Title:

Investigations of electrical properties of Eu- and Pd-doped titanium dioxide thin films on silicon

Group publication title:

Optica Applicata

Creator:

Domaradzki, Jarosław ; Borkowska, Agnieszka ; Kaczmarek, Danuta ; Prociów, Eugeniusz L.

Contributor:

Gaj, Miron. Redakcja

Subject and Keywords:

optyka ; oxide semiconductor ; thin film ; electrical properties

Description:

Optica Applicata, Vol. 37, 2007, nr 1-2, s. 133-137

Abstrakt:

In this work, investigations of electrical properties of Eu- and Pd-doped TiO2 thin films have been outlined. Thin films were deposited by low pressure hot target reactive magnetron sputtering from metallic Ti-Eu-Pd mosaic target on conventional silicon wafers. For electrical characterization of prepared thin films both temperature dependent resistivity and current to voltage (I–V) characteristics have been examined. It has been shown that incorporation of Pd and Eu dopants into TiO2 matrix modified its properties to obtain n-type oxide-semiconductor which is electrically and optically active at room temperature. Additionally from I–V measurements the formation of heterojunction at the interface of thin film–silicon was confirmed.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2007

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 37, 2007 ; Optica Applicata, Vol. 37, 2007, nr1-2 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

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