Title:
Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region
Group publication title:
Creator:
Pucicki, Damian ; Zborowska-Lindert, Iwona ; Ściana, Beata ; Radziewicz, Damian ; Boratyński, Bogusław
Contributor:
Subject and Keywords:
optyka ; p-i-n photodetector ; diluted nitrides ; (In,Ga)(As,N) ; GaAs-based photodetectors ; double quantum well (DQW) heterostructures
Description:
Optica Applicata, Vol. 37, 2007, nr 4, s. 415-421
Abstrakt:
Double quantum well (DQW) (In, Ga)(As, N)/GaAs p-i-n photodetectors, grown by solid source molecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption for wavelengths above 870 nm have been investigated. The active region of the photodetectors contained two very thin absorption layers: 10.5 nm Ga(As, N) (structure #DP02) or 4 nm (In, Ga)(As, N) (#DP03). In spite of this, photodetectors exhibited high sensitivity (0.0525 A/W for 980 nm) for wavelength greater than the absorption edge of GaAs (870 nm). The dark current of photodetectors did not exceed 0.1 μA.
Publisher:
Oficyna Wydawnicza Politechniki Wrocławskiej
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Date:
Resource Type:
Source:
<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link
Language:
Relation:
Optica Applicata ; Optica Applicata, Vol. 37, 2007 ; Optica Applicata, Vol. 37, 2007, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki
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