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Title:

Photoluminescence spectroscopy for the evaluation of band potential roughness of InGaN active layers

Group publication title:

Optica Applicata

Creator:

Kazlauskas, Karolis ; Jursenas, Saulius ; Miasojedovas, Saulius ; Pobedinskas, Paulius ; Tamulaitis, Gintautas ; Zukauskas, Arturas ; Ivanov, Vitalii Yu. ; Godlewski, Marek ; Skierbiszewski, Czeslaw ; Siekacz, Marcin ; Leszczyński, Michał ; Franssen, Gijs ; Perlin, Piotr ; Suski, Tadeusz ; Grzegory, Izabella

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; photoluminescence ; InGaN quantum wells ; Monte Carlo simulation ; exciton hopping

Description:

Optica Applicata, Vol. 36, 2006, nr 2-3, s. 181-185

Abstrakt:

Photoluminescence spectroscopy in combination with Monte Carlo simulation of exciton hopping is demonstrated to be a valuable tool for quantitative analysis of the band potential profile in active layers for InGaN-based light emitters. Recently proposed double-scaled potential profile model is used to reveal the scale of potential fluctuations in the individual In-rich regions as well as the dispersion of the average exciton localization energy in these regions. The influence of the different potential fluctuation scales on the stimulated emission threshold and luminescence decay time of highly excited InGaN active layers is studied.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2006

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 36, 2006 ; Optica Applicata, Vol. 36, 2006, nr 2-3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska