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Title:

Investigation of deep defects using generation-recombination noise

Group publication title:

Optica Applicata

Creator:

Gislason, Haflidi P. ; Seghier, Djelloul

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; generation-recombination noise ; deep defects ; GaN ; AlGaN ; GaAs

Description:

Optica Applicata, Vol. 36, 2006, nr 2-3, s. 359-371

Abstrakt:

Noise spectroscopy is an effective tool to characterize the quality of semiconductor bulk and surface and a figure of merit for device quality as a whole. In certain cases, low-frequency noise can be used for the evaluation of device reliability. Further, measurements of the noise characteristics of GaAs materials are a useful technique when it comes to studying deep defects exhibiting a thermally activated capture. In the paper we present the technique of noise spectroscopy and illustrate it with some applications. They include photocapacitive and noise measurements on a deep DX-like defect which gives rise to persistent photoconductivity in Mg-doped p-type GaN films. We also apply DLTS, photoconductivity and noise spectroscopy to characterize n-type bulk GaAs and an EL2-related metastable defect. The third example illustrates experimental results on the photoconductivity and noise of forward and reverse biased Al0.3Ga0.7N/GaN-based Schottky barriers. In the light of these results the nature and origin of the responsible centers are discussed.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2006

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 36, 2006 ; Optica Applicata, Vol. 36, 2006, nr 2-3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska