Title:

Study on high signal-to-noise ratio (SNR) silicon p-n junction photodetector

Group publication title:

Optica Applicata

Creator:

Fu, XianSong ; Yao, SuYing ; Xu, JiangTao ; Lu, Yao ; Zheng, YunGuang

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; silicon p-n junction photodetector ; antireflection layer ; adjustment technique of spectrum band ; spectral responsivity ; high signal-to-noise ratio (SNR)

Description:

Optica Applicata, Vol. 36, 2006, nr 2-3, s. 421-428

Abstrakt:

On the basis of n-type single-crystal (100) silicon substrate, a silicon p-n junction photodetector has been successfully developed. Three methods to improve photoresponse signal-to-noise ratio (SNR) were profoundly studied: the p-n junction depth was optimized to enhance the spectral responsivity within the wavelength range of 500–600 nm, an antireflection layer with the appropriate thickness was added to reduce the reflected light and enhance the sensitivity, the adjustment technique of spectral band response was adopted to remove the noise signal with normal silicon absorptive wavelengths. Eventually, the spectral responsivity SNR can be over 104 at 500–600 nm while the peak of spectral responsivity is 0.48 A/W at about 520 nm. After being optimized, silicon p-n junction photodetectors, which possess the properties of lower dark current, higher sensitivity, shorter response time and larger SNR, can be achieved.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2006

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 36, 2006 ; Optica Applicata, Vol. 36, 2006, nr 2-3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska