Object structure
Title:

Photoluminescence studies of TM and RE doped oxides using diamond anvil cell

Group publication title:

Optica Applicata

Creator:

Kamińska, Agata

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; diamond-anvil cells ; high pressure ; LiNbO3 ; Cr3+ dopant ; luminescence ; garnet crystals ; ingomogenous broadening ; Yb3+ ions ; f-d transitions ; spinel

Description:

Optica Applicata, Vol. 36, 2006, nr 2-3, s. 163-179

Abstrakt:

The present status of high-pressure research with the diamond anvil cell (DAC) is described, focusing mainly on use of this technique in optical spectroscopy. After a brief description of the history of the development of high-pressure measurements, the principles of DAC technique are described in more detail. Then different applications of this technique to high-pressure research are discussed, including optical spectroscopy, electrical measurements, X-ray diffractometry and other measurements. Results obtained for selected materials, with a view to illustrating the physics behind high-pressure phenomena, are presented and discussed. These include high-pressure luminescence studies of Cr3+ or Yb3+-doped lithium niobate crystal (LiNbO3) as well as Cr3+ and Nd3+-doped lanthanum lutetium gallium garnet crystal (La3Lu2Ga3O12). Finally, the boundary of high-pressure spectroscopy usefulness is shown. The example of such a case is the study of Cr3+-doped MgO-2.5Al2O3 non-stoichiometric green spinel.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2006

Resource Type:

artykuł

Format:

application/pdf

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 36, 2006 ; Optica Applicata, Vol. 36, 2006, nr 2-3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

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