Title:

Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces

Group publication title:

Optica Applicata

Creator:

Miczek, Marcin ; Adamowicz, Bogusława ; Hashizume, Tamotsu ; Hasegawa, Hideki

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; gallium arsenide ; gallium nitride ; surface states ; bulk traps ; photoluminescence ; surface photovoltage

Description:

Optica Applicata, Vol. 35, 2005, nr 3, s. 355-361

Abstrakt:

The influence of surface state density NSS and bulk non-radiative lifetime t on room temperature photoluminescence quantum efficiency YPL and surface photovoltage (SPV) versus the excitation light intensity F was studied theoretically for GaAs and wurtzite GaN using self-consistent computer simulations. It was demonstrated that SPV(F ) dependences are more sensitive than YPL(F ) to a change in magnitude of NSS, especially for high NSS and at low F, whereas SPV is practically insensitive to t contrary to YPL. The simultaneous measurement of YPL and SPV versus F, combined with rigorous computer analysis, seems to be a very promising method for contactless characterization of the surface and bulk trap parameters.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2005

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 35, 2005 ; Optica Applicata, Vol. 35, 2005, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska