Title:

Application of interference methods for determination of curvature radius in metal–oxide–semiconductor (MOS) structures

Group publication title:

Optica Applicata

Creator:

Rzodkiewicz, Witold ; Borowicz, Lech

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; Si–SiO2 system ; interferometry ; radius of curvature ; stress

Description:

Optica Applicata, Vol. 35, 2005, nr 3, s. 523-527

Abstrakt:

The paper deals with the measurement of the radius of curvature of silicon wafer surface. The aim of these measurements was to determine stresses generated during oxidation of silicon wafers. A greater molar volume of SiO2 layer in relation to the substrate material causes changes in the shape of oxidized surface, which results in stresses in both silicon dioxide layer and silicon. These changes are detected by Fizeau interferometer. In order to find the local value of curvature radii, deformations of the wafers under investigation approximated by corresponding interpolation formulas have been determined.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2005

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 35, 2005 ; Optica Applicata, Vol. 35, 2005, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska