Title:
Group publication title:
Creator:
An, Yu-Peng ; Wang, Yi-Ding ; Cao, Feng
Contributor:
Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja
Subject and Keywords:
optyka ; point defects ; interdiffusion ; built-in electric field
Description:
Optica Applicata, Vol. 40, 2010, nr 1, s. 249-254
Abstrakt:
Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si3N4 and SiO2 as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field.
Publisher:
Oficyna Wydawnicza Politechniki Wrocławskiej
Place of publication:
Date:
Resource Type:
Source:
<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link
Language:
Relation:
Optica Applicata ; Optica Applicata, Vol. 40, 2010 ; Optica Applicata, Vol. 40, 2010, nr 1 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki
Rights:
Wszystkie prawa zastrzeżone (Copyright)
Access Rights:
Dla wszystkich w zakresie dozwolonego użytku