Search for: [Abstrakt = "This paper addresses some physical aspects and presents experimental results concerning to phenomena which evoke modification of band structure in lattice mismatched InGaAs\/GaAs heterostructures, namely the introduction of extra deep\-lying energy levels in the bandgap. The deep level transient spectroscopy reveals commonly observed deep level defects in GaAs\-based structures associated with native point defects as well as misfit dislocations related to strain relaxation processes."]

Number of results: 1