Object

Title: Modification of energy bandgap in lattice mismatched InGaAs/GaAs heterostructures

Creator:

Gelczuk, Łukasz ; Dąbrowska-Szata, Maria

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Description:

Optica Applicata, Vol. 39, 2009, nr 4, s. 845-852

Abstrakt:

This paper addresses some physical aspects and presents experimental results concerning to phenomena which evoke modification of band structure in lattice mismatched InGaAs/GaAs heterostructures, namely the introduction of extra deep-lying energy levels in the bandgap. The deep level transient spectroscopy reveals commonly observed deep level defects in GaAs-based structures associated with native point defects as well as misfit dislocations related to strain relaxation processes.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2009

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:62689

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 39, 2009 ; Optica Applicata, Vol. 39, 2009, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

Group publication title:

Optica Applicata

Objects

Similar

This page uses 'cookies'. More information