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Thermal model of nitride edge-emitting laser diodes

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Title: Thermal model of nitride edge-emitting laser diodes

Creator:

Kuc, Maciej ; Sarzała, Robert P.

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Description:

Optica Applicata, Vol. 39, 2009, nr 4, s. 663-672

Abstrakt:

Nitride laser diodes (LDs), as compared with arsenide ones, are known to exhibit poor thermal properties, mostly because of a very intense heat generation within their volumes. Therefore, to enable their useful operation, they should be designed in a way enhancing efficiency of heat-flux extraction from their volumes. In the present paper, the finite-element approach has been used to compare heat-flux spreading mechanism in continuous-wave room-temperature threshold operated nitride laser diodes with four different mounting schemes. For the standard laser width of 300 μm, the maximal active-region temperature increase over the RT ranges from 33.3 K (for the best two-sided heat LD mounting with the diamond heat spreader on the p-side) to 50.0 K (for the n-side LD mounting). As expected, laser diodes attached to their heat sinks on their p-side exhibit much more efficient heat-flux extraction than those attached on their n-type substrate. Even more efficient extraction takes place for the two-sided laser mounting. Besides, an application of the diamond heat spreader considerably enhances the above efficiency disregarding the place of its application. Further improvements may be expected in new optimised nitride laser devices designed in a way enhancing both heat-flux flow through areas of high-thermal-conductivity materials (diamond, copper, but also binary nitride compounds) and a reduction of heat-flux paths through layers of low-thermal-conductivity ternary and quaternary nitride compounds.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Date:

Resource Type:

Resource Identifier:

oai:dbc.wroc.pl:62103

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

Relation:

Optica Applicata ; Optica Applicata, Vol. 39, 2009 ; Optica Applicata, Vol. 39, 2009, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

Group publication title:

Optica Applicata

Subject and keywords:

optyka InGaN/GaN laser diode simulation of a laser diode operation thermal model heat-flux spreading analysis

Object collections:

Last modified:

Mar 12, 2019

In our library since:

Mar 12, 2019

Number of object content hits:

40

All available object's versions:

https://dbc.wroc.pl/publication/110757

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Optica Applicata

Edition name	Date
Thermal model of nitride edge-emitting laser diodes	Mar 12, 2019

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