Object

Title: New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors

Creator:

Wośko, Mateusz ; Paszkiewicz, Bogdan ; Radziewicz, Damian ; Ściana, Beata ; Paszkiewicz, Regina ; Tłaczała, Marek ; Kovac, Jaroslav ; Vincze, Andrej

Description:

Optica Applicata, Vol. 39, 2009, nr 4, s. 739-747

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Date:

2009

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:62181

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 39, 2009 ; Optica Applicata, Vol. 39, 2009, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Location:

Politechnika Wrocławska

Abstrakt:

In this paper, the authors present a new attempt to the growth of AlGaAs structures with continuous change of aluminum content by metalorganic vapor phase epitaxy (MOVPE) technique. The new method of design of multistage growth process for functionally graded semiconductor materials (FGM) has been proposed. A comparison between classical single stage and multistage growth process has been carried out. The analysis of PVS, ECV and SIMS results of fabricated photodetector structures shows significant differences in composition profile of theoretically estimated and fabricated structures, and prove that the new conception of multistage process has more advantages over classical single stage procedure.

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Group publication title:

Optica Applicata

Objects

Similar

This page uses 'cookies'. More information