Object

Title: Capacitance-transient spectroscopy on irradiation-induced defects in Ge

Creator:

Nylandsted Larsen, Arne ; Mesli, Abdelmadjid

Description:

Optica Applicata, Vol. 36, 2006, nr 2-3, s. 245-256

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Date:

2006

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:63582

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 36, 2006 ; Optica Applicata, Vol. 36, 2006, nr 2-3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Location:

Politechnika Wrocławska

Abstrakt:

Recent studies of room-temperature irradiation-induced defects in Ge using space-charge capacitance-transient spectroscopy are reviewed. From these measurements only two defect complexes have been unambiguously identified until now: the E-center (the group-V impurity-vacancy pair) and the A-center (the interstitial oxygen-vacancy pair). However, contrary to silicon where each of these centers introduces only one energy level, in germanium the E-center has three energy levels corresponding to four charge states (=, –, 0, +), and the A-center has two levels corresponding to three charge states (=, –, 0). Another feature specific to each material is the anneal temperature. Both centers disappear below 150°C in germanium, whereas in silicon the E-center anneals out at ~150°C, depending on the charge state, and the A-center is stable up to 350°C.

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Group publication title:

Optica Applicata

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