Object

Title: Characterization of InGaN structures grown by epitaxial lateral overgrowth over a-plane GaN template

Creator:

Miasojedovas, Saulius ; Jursenas, Saulius ; Kuokstis, Edmundas ; Zukauskas, Arturas ; Gaevski, Mikhail E. ; Lee, Jiawei ; Shatalov, Maxim ; Gong, Zheng ; Adivarahan, Vinod ; Sattu, Ajay ; Mokina, Irina ; Yang, Jinwei ; Khan, M. Asif

Description:

Optica Applicata, Vol. 36, 2006, nr 2-3, s. 351-358

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Date:

2006

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:63597

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 36, 2006 ; Optica Applicata, Vol. 36, 2006, nr 2-3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Location:

Politechnika Wrocławska

Abstrakt:

We report on the luminescence characterization of InGaN/GaN multiple quantum well (MQW) structures with average 15% In content in the well layers, grown on polar and non-polar sapphire substrates utilizing epitaxial lateral overgrowth (ELOG) technique. Significant modification of the emission properties of MQWs grown over non-polar ELOG structure in comparison with non-polar orientation was observed. It was attributed to the formation of In-rich quantum dot like structures in the vicinity of substrate related defects along stripes formed during ELOG procedure. The absence of the stimulated emission and the significant reduction of carrier lifetime, observed under strong excitation, indicate the high density of nonradiative centers in the In-rich quantum dot regions of non-polar ELOG MQWs.

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Group publication title:

Optica Applicata

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