Object

Title: Investigation of segregation by quantitative transmission electron microscopy

Creator:

Schowalter, Marco ; Rosenauer, Andreas ; Litvinov, Dimitri ; Gerthsen, Dagmar

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Description:

Optica Applicata, Vol. 36, 2006, nr 2-3, s. 297-309

Abstrakt:

The segregation effect occuring during molecular beam epitaxy and metalorganic vapour phase epitaxy growth of ternary III-V semiconductor heterostructures was investigated by quantitative transmission electron microscopy (QTEM) and by simulation of optical properties. The concentration distribution of various III-V semiconductor heterostructures was measured by QTEM and averaged along the direction perpendicular to the growth direction. Resulting concentration profiles could be well fitted using the model of Muraki et al. (Muraki K., Fukatsu S., Shiraki Y., Ito R., Appl. Phys. Lett. 61(5), 1992, p. 557) yielding the segregation efficieny R. For the investigation of the effect of segregation on the photoluminescence, concentration profiles for different segregation efficiencies were simulated and photoluminescence peak energies were derived by solving Schrödinger’s equation for spatially varying potentials deduced from the measured concentration profiles.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2006

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:63590

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 36, 2006 ; Optica Applicata, Vol. 36, 2006, nr 2-3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

Group publication title:

Optica Applicata

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