Title:

AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region

Group publication title:

Optica Applicata

Creator:

Ściana, Beata ; Radziewicz, Damian ; Pucicki, Damian ; Tłaczała, Marek ; Kováč, Jaroslav ; Srnanek, Rudolf

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; heterojunction phototransistor ; Zn delta-doped GaAs ; EC-V measurements ; photovoltage spectroscopy ; micro-Raman spectroscopy

Description:

Optica Applicata, Vol. 35, 2005, nr 3, s. 645-650

Abstrakt:

The paper presents the technology and characterisation of n-p-n AlGaAs/GaAs heterojunction phototransistor (HPT) with a thin (50 nm) Zn delta-doped GaAs base region. Such a construction of the HPT transistor was applied to obtain higher current gain and lower power consumption. The electrical and optical properties of the HPT transistor were examined using electrochemical capacitance-voltage (EC-V) measurements, photovoltage, photocurrent and micro-Raman spectroscopies. The measured and simulated I-U characteristics as well as results of time response measurements are also presented and discussed. All investigations were carried out without a base bias (“floating base”).

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2005

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 35, 2005 ; Optica Applicata, Vol. 35, 2005, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska