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Title:

Temperature dependence of the spontaneous emission mechanisms of localized-state heterosystem

Group publication title:

Optica Applicata

Creator:

Lee, Jiunn-Chyi

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Subject and Keywords:

optyka ; quantum dot ; multi-quantum well ; photoluminescence ; localized-state

Description:

Optica Applicata, Vol. 41, 2011, Nr 4, s. 911-919

Abstrakt:

The temperature dependent photoluminescence (PL) spectra measured from localized-state material system is presented. Two localized-state heterosystems, including InGaN/GaN multi-quantum well (MQW) and InAs/GaAs quantum dot (QD) samples were prepared. The samples were investigated both experimentally and theoretically. It has been found that the temperature dependence of the PL peak energies from both samples behaves differently. S-shaped and anti-S-shaped PL peak energies have been observed for MQW and QD samples, respectively. We present a model which takes into account all of the key factors for the localized-carrier dynamics. The model is applied to interpret the experimental data obtained from the two kinds of material systems. Detailed discussion concerning this model provides an explicit interpretation that it is the difference in the electronic structure of the two material systems that leads to the significantly different temperature dependence of their luminescence bands.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2011

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 41, 2011 ; Optica Applicata, Vol. 41, 2011, Nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska