Object

Creator:

Bo, He ; Ma, Zhong Quan ; Jing, Xu ; Lei, Zhao ; Sheng, Zhang Nan ; Feng, Li ; Cheng, Shen ; Ling, Shen ; Jie, Meng Xia ; Yue, Zhou Cheng ; Shan, Yu Zheng ; Ting, Yin Yan

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Description:

Optica Applicata, Vol. 39, 2009, nr 3, s. 547-560

Abstrakt:

A novel ITO/SiO2/np-silicon violet and blue enhanced photovoltaic device with SINP structure has been fabricated by thermal diffusion of phosphorus. The shallow junction was formed to enhance the spectral responsivity within the wavelength range of 400–600 nm. An ultrathin silicon dioxide was thermally grown at low temperature and RF sputtering of ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The crystalline structure, optical and electric properties of ITO film were determined by an XRD, UV-VIS spectrophotometer, a four point probe and the Hall effect measurement, respectively. The results show that ITO film has high quality. The current-voltage (I-V) characteristics, spectral response and responsivity of the photovoltaic device with high quantum efficiency of violet SINP and deep junction SINP structure were calculated and analyzed in detail.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2009

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:59282

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 39, 2009 ; Optica Applicata, Vol. 39, 2009, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska