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- Lower Silesian Digital Library > Participants of the Consortium > 01. Wrocław University of Technology > Journals WUoT > Journals published at Wrocław University of Technology > Optica Applicata
- Lower Silesian Digital Library > Resources > 2. Czasopisma > Czasopisma współczesne
- Lower Silesian Digital Library > Fields of science > 6. Nauki ścisłe i przyrodnicze
Last modified:
Jan 16, 2019
In our library since:
Apr 4, 2018
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4
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4
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https://dbc.wroc.pl/publication/44891
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Optica Applicata
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Optica Applicata, Vol. 1, 1971
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Optica Applicata, Vol. 2, 1972
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Optica Applicata, Vol. 3, 1973
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Optica Applicata, Vol. 4, 1974
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Optica Applicata, Vol. 5, 1975
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Optica Applicata, Vol. 6, 1976
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Optica Applicata, Vol. 7, 1977
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Optica Applicata, Vol. 8, 1978
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Optica Applicata, Vol. 9, 1979
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Optica Applicata, Vol. 10, 1980
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Optica Applicata, Vol. 11, 1981
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Optica Applicata, Vol. 12, 1982
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Optica Applicata, Vol. 13, 1983
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Optica Applicata, Vol. 14, 1984
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Optica Applicata, Vol. 15, 1985
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Optica Applicata, Vol. 16, 1986
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Optica Applicata, Vol. 17, 1987
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Optica Applicata, Vol. 18, 1988
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Optica Applicata, Vol. 19, 1989
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Optica Applicata, Vol. 20, 1990
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Optica Applicata, Vol. 21, 1991
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Optica Applicata, Vol. 22, 1992
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Optica Applicata, Vol. 23, 1993
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Optica Applicata, Vol. 24, 1994
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Optica Applicata, Vol. 25, 1995
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Optica Applicata, Vol. 26, 1996
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Optica Applicata, Vol. 27, 1997
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Optica Applicata, Vol. 28, 1998
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Optica Applicata, Vol. 29, 1999
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Optica Applicata, Vol. 30, 2000
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Optica Applicata, Vol. 31, 2001
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Optica Applicata, Vol. 32, 2002
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Optica Applicata, Vol. 32, 2002, nr 1-2
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Optica Applicata, Vol. 32, 2002, nr 3
- Contents [Optica Applicata, Vol. 32, 2002, nr 3]
- Low energy ion beam-induced modification of InSb surface studied at nanometric scale
- Characterization of electronic properties of InP(100) surfaces from computer-aided analysis of photoluminescence
- Ultra-low frequency spectra for Li+ ion thermoemission noise
- Changes of properties during the annealing Fe28Co50Si9B13 and Fe28Ni50Si9B13 metallic glasses
- Ordering of the vicinal Si(15 1 0) surface at low Au coverage
- Studies on the origin of reflection high energy electron diffraction oscillations observed during molecular beam epitaxy
- Growth of the optical layers in a stochastic simulation. Study of a film morphology
- Influence of Ar and He implantation on surface morphology of polymers
- Erythrocyte surface modification due to the pharmacological treatment studied with atomic force microscopy
- H3+-synthesis on the surface of d-transition metals during the process of field desorption
- Optical gain saturation effects in InAs/GaAs self-assembled quantum dots
- Influence of adsorbed atoms on the charge transfer in atom/ionsurface collision
- Photoreflectance spectroscopy of semiconductor device active regions: quantum wells and quantum dots
- Defect structure changes in thin layers of semiconductors annealed under hydrostatic pressure
- Optical properties of AlN thin films obtained by reactive magnetron sputtering
- Determination of stress in Au/Ni multilayers by symmetric and asymmetric X-ray diffraction
- Plasma dry etching of monocrystalline silicon for the microsystem technology
- Optimized structure of SiCxNy–Si(111) interfaces by molecular dynamics simulation
- Bonding with atomic rearrangement – new possibilities in material and devices technology
- Influence of the thermal annealing on hydrogen concentration in GaN layers – SIMS characterization
- Optical anisotropy of Pb nanowires on Si(533) surface
- Optical properties of nominally undoped n-type MOVPE GaN epilayers
- Forming the high quality CoSi2 by solid phase epitaxy
- Effect of uniform stress on SiO2/Si interface in oxygen-implanted Si and SIMOX structures
- High-energy electron emission from MIS-structures
- Computer controlling of MOVPE process
- Measurements of stress during ion irradiation
- Non-standard techniques of surface characterization in scanning electron microscope
- Photoreflectance study of AlGaN/GaN heterostructures grown by MOCVD process
- Transistors today – after 50 years in microelectronics
- Computer simulation of performance characteristics of (GaIn)(NAs) diode lasers
- Numerical simulation of semiconductor lasers
- High power AlGaAs/GaAs lasers with improved optical degradation level
- Method of lines – the new vectorial approach to optical phenomena in diode lasers
- Computer modelling of devices based on AlGaN/GaN heterostructure
- Designing guidelines for nitride VCSELs resonator
- Application of selective area epitaxy for GaN devices
- Heterojunction In0.53Ga0.47As/InP magnetic field sensors fabricated by molecular beam epitaxy
- Numerical modelling of InGaAs infrared photovoltaic detectors
- Reflectance study of SiO2/Si3N4 dielectric Bragg reflectors
- Numerical calculation of electron density distribution in modulation-doped GaAs/AlGaAs heterostructures
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Optica Applicata, Vol. 32, 2002, nr 4
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Optica Applicata, Vol. 32, 2002, nr 1-2
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Optica Applicata, Vol. 33, 2003
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Optica Applicata, Vol. 34, 2004
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Optica Applicata, Vol. 35, 2005
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Optica Applicata, Vol. 36, 2006
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Optica Applicata, Vol. 37, 2007
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Optica Applicata, Vol. 38, 2008
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Optica Applicata, Vol. 39, 2009
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Optica Applicata, Vol. 40, 2010
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Optica Applicata, Vol. 41, 2011
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Optica Applicata, Vol. 42, 2012
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Optica Applicata, Vol. 43, 2013
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Optica Applicata, Vol. 44, 2014
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Optica Applicata, Vol. 45, 2015
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Optica Applicata, Vol. 46, 2016
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Optica Applicata, Vol. 47, 2017
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Optica Applicata, Vol. 1, 1971
| Edition name | Date |
|---|---|
| Numerical calculation of electron density distribution in modulation-doped GaAs/AlGaAs heterostructures | Jan 16, 2019 |
