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High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers
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Title: High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers

Creator:

Kosiel, Kamil ; Muszalski, Jan ; Szerling, Anna ; Bugajski, Maciej

Contributor:

Gaj, Miron. Redakcja

Description:

Optica Applicata, Vol. 37, 2007, nr 4, s. 423-432

Abstrakt:

A technology of high power, continuous-wave (CW) semiconductor lasers has been elaborated. AlGaAs/InGaAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE), were used to fabricate laser diodes. The active region of laser diode was formed as strained, 8 nm thick, quantum well (QW) InGaAs layer. The AlGaAs layers of graded composition and graded refractive index (GRIN) formed the waveguide. Lasers were processed into wide stripe (W = 100 μm) mesas and were mounted on copper submounts and Peltier thermoelements in the standard TO-3 transistor housing. For stabilization of laser output, a silicon photodiode was placed next to a laser chip in the same case. Typical threshold current densities were 150 A/cm2, and the quantum efficiencies were of the order of 0.8 W/A. Lasers may work in pulsed regime as well as in CW regime with guaranteed optical power of 1 W at 300 K. The record threshold current densities achieved for 700 μm cavity were as low as 130 A/cm2 and the characteristic temperature was T0 = 200 K.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2007

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:63179

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 37, 2007 ; Optica Applicata, Vol. 37, 2007, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

Group publication title:

Optica Applicata

Subject and keywords:

optyka high power semiconductor laser graded refractive index separate confinement heterostructure (GRINSCH) threshold current external efficiency parameter T0 Auger recombination spontaneous radiative recombination nonradiative recombination

Object collections:

Last modified:

Apr 1, 2019

In our library since:

Apr 1, 2019

Number of object content hits:

189

All available object's versions:

https://dbc.wroc.pl/publication/117040

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High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers Apr 1, 2019

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