Advanced search ?

Object

Influence of high pressure annealing on electrical properties of surface layer of neutron irradiated or germanium-doped Czochralski-grown silicon
Download

Title: Influence of high pressure annealing on electrical properties of surface layer of neutron irradiated or germanium-doped Czochralski-grown silicon

Creator:

Jung, Wojciech ; Misiuk, Andrzej ; Londos, Charalambos A. ; Yang, Deren ; Antonova, Irina V. ; Prujszczyk, Marek

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Description:

Optica Applicata, Vol. 35, 2005, nr 3, s. 393-398

Abstrakt:

The effect of annealing at 720–920 K under enhanced pressure (up to 1.1 GPa) in argon ambient on electrical properties of the surface layer of the Czochralski-grown silicon (Cz-Si) subjected to neutron irradiation (doses of up to 1×1017 cm–2, E = 5 MeV) or germanium doping (doping level 7×1017 cm–3) was investigated by electrical C-V, I-V and admittance method. The stress-induced decrease in electron concentration was observed in both p- and n-type samples after neutron irradiation and annealing under a pressure of 1.1 GPa at 720 K for 10 hours, while in the germanium doped samples an ascending dependence of the creation of thermal donors and lack of dependence of new donors on hydrostatic pressure was observed. The effects observed can be explained as resulting, among others, from the irradiation-induced defects (generation of thermal acceptors) and pressure stimulated creation of thermal donors in germanium-doped silicon.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2005

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:72766

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 35, 2005 ; Optica Applicata, Vol. 35, 2005, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

Group publication title:

Optica Applicata

Subject and keywords:

optyka germanium-doped silicon neutron-irradiated silicon defects

Object collections:

Last modified:

Sep 13, 2019

In our library since:

Sep 13, 2019

Number of object content hits:

37

All available object's versions:

https://dbc.wroc.pl/publication/140865

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Influence of high pressure annealing on electrical properties of surface layer of neutron irradiated or germanium-doped Czochralski-grown silicon Sep 13, 2019

Similar

Optica Applicata
Optica Applicata

Defect structure changes in thin layers of semiconductors annealed under hydrostatic pressure

Bąk-Misiuk, Jadwiga Misiuk, Andrzej Domagała, Jarosław Gaj, Miron. Redakcja Wilk, Ireneusz. Redakcja

2002
artykuł
Optica Applicata
Optica Applicata

Fibre optic pressure sensor and monitoring of structural defects

Pandey, N.K. Yadav, B.C. Gaj, Miron. Redakcja

2007
artykuł
Optica Applicata
Optica Applicata

Effect of uniform stress on SiO2/Si interface in oxygen-implanted Si and SIMOX structures

Bryja, Leszek Kątcki, Jerzy Ratajczak, Jacek Misiuk, Andrzej Gaj, Miron. Redakcja Wilk, Ireneusz. Redakcja

2002
artykuł
Optica Applicata
Optica Applicata

Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures

An, Yu-Peng Wang, Yi-Ding Cao, Feng Gaj, Miron. Redakcja Urbańczyk, Wacław. Redakcja

2010
artykuł
Optica Applicata
Optica Applicata

Investigation of deep defects using generation-recombination noise

Gislason, Haflidi P. Seghier, Djelloul Gaj, Miron. Redakcja Wilk, Ireneusz. Redakcja

2006
artykuł
Optica Applicata
Optica Applicata

Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy

Szerling, Anna Kosiel, Kamil Wójcik-Jedlińska, Anna Płuska, Mariusz Bugajski, Maciej Gaj, Miron. Redakcja Wilk, Ireneusz. Redakcja

2005
artykuł
Optica Applicata
Optica Applicata

Modification of energy bandgap in lattice mismatched InGaAs/GaAs heterostructures

Gelczuk, Łukasz Dąbrowska-Szata, Maria Gaj, Miron. Redakcja Urbańczyk, Wacław. Redakcja

2009
artykuł
Optica Applicata
Optica Applicata

Sur la forme relativiste des conditions du stigmatisme parfait

Wojewoda, Henryk Gaj, Kazimierz. Redakcja

1984
czasopismo
More
×

Citation

Citation style:

Contact details

Address

Wrocław University of Science and Technology (Coordinator)
Library of Wrocław University of Science and Technology
Wybrzeże Wyspiańskiego 27
50-370 Wrocław, Poland

Phone

(+48) 71-320-38-30
(+48) 71-320-47-50

E-Mail

bc@pwr.edu.pl

Visit us!

https://biblioteka.pwr.edu.pl/

This page uses 'cookies'. More information