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Optical methods used to optimise semiconductor laser structures with tunnel injection from quantum well to InGaAs/GaAs quantum dots
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Title: Optical methods used to optimise semiconductor laser structures with tunnel injection from quantum well to InGaAs/GaAs quantum dots

Creator:

Rudno-Rudziński, Wojciech ; Ryczko, Krzysztof ; Sęk, Grzegorz ; Syperek, Marcin ; Misiewicz, Jan ; Pavelescu, Emil-Mihai ; Gilfert, Christian ; Reithmaier, Johann Peter

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Description:

Optica Applicata, Vol. 39, 2009, nr 4, s. 923-932

Abstrakt:

We present the results of optical measurements performed on structures consisting of an InGaAs quantum well (QW), separated by a thin barrier from a layer of self-assembled InGaAs quantum dots (QDs). Such a kind of design is called a tunnel injection structure, because its functionality is based on the tunnelling of carriers from a QW to QDs, preferably with the assistance of optical phonons. In this approach, the injector QW serves as a reservoir of the carriers (due to much higher efficiency of carrier collection) and alleviates the problem of long relaxation times needed for carriers to reach the QDs ground state. In order to investigate the structures several complementary experimental techniques are applied. Photoreflectance, an absorption-like modulation spectroscopy, gives the information about the optical transitions and the electronic structure. The temperature evolution of photoluminescence allows emission efficiency and carrier losses to be determined. Photoluminescence excitation probes directly the carrier transfer from QW to the dots. The interpretation of the results is supported by the calculations in the envelope function formalism. It has been found out that the wavefunction position of the lowest lying levels depends on the QW parameters and thus different regimes of tunnelling are proposed.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2009

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:62722

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 39, 2009 ; Optica Applicata, Vol. 39, 2009, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

Group publication title:

Optica Applicata

Subject and keywords:

optyka quantum dots optical properties lasers tunnel injection

Object collections:

Last modified:

Mar 15, 2019

In our library since:

Mar 15, 2019

Number of object content hits:

46

All available object's versions:

https://dbc.wroc.pl/publication/112207

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Optical methods used to optimise semiconductor laser structures with tunnel injection from quantum well to InGaAs/GaAs quantum dots Mar 15, 2019

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