Object

Title: Methods of silicon surface structurization for the purpose of the deposition of III-V epitaxial layers

Creator:

Zubel, Irena ; Kramkowska, Małgorzata ; Ninierza, Tomasz

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Description:

Optica Applicata, Vol. 39, 2009, nr 4, s. 749-759

Abstrakt:

This paper presents the results of the texturing of silicon substrates with various crystallographic orientations by anisotropic etching, both in a maskless process and in a process employing specially shaped mask patterns. Several etching solutions based on KOH and KOH with isopropanol, enabling a uniform texturing of silicon substrates with selected orientations in maskless process, were tested in order to find an optimal composition. We proposed a texturing process with the use of an appropriate oxide mask, which allowed the analysis of the epitaxy process in terms of orientation and inclination of sidewalls and edges of resultant structures. The structured substrate can be used for the investigation of growth of GaN epitxial layers on silicon substrates.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2009

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:62182

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 39, 2009 ; Optica Applicata, Vol. 39, 2009, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

Group publication title:

Optica Applicata

Similar

×

Citation

Citation style:

This page uses 'cookies'. More information